Wafer-scale porous graphene network shows room-temperature ferromagnetism
Researchers have successfully grown a wafer-scale hyper-porous graphene network that exhibits ferromagnetism at room temperature. This material, created using plasma-assisted vapor processes, shows magnetic properties significantly higher than traditional graphite.
Why it matters
This breakthrough could lead to advancements in spintronics and magnetic data storage technologies by providing a carbon-based magnetic material that functions without extreme cooling.
Researchers at Shenzhen University, the Japan Atomic Energy Agency, the National Institutes for Quantum Science and Technology (QST), the University of Tokyo, the University of Science and Technology of China, Xi'an Jiaotong University, Shenzhen Technology University (SZTU), and The Hong Kong Polytechnic University, have grown a wafer-scale hyper-porous graphene network (HGN) that shows intrinsic ferromagnetism at room temperature.
Optical image of HGN on a 2-inch Si wafer. Image from: Nanowerk
The film was produced across a full 2-inch oxide-coated silicon wafer using a plasma-assisted vapor process combined with low-energy electron irradiation, and reached a magnetic moment density roughly 1,000 times higher than defected highly oriented pyrolytic graphite (HOPG).
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