Samsung's Processing-in-Memory (PIM)

In-memory compute has been an attractive proposition for many years because compute within a memory chip can exploit its higher internal bandwidth. Additionally, in-memory compute avoids the long latency path between DRAM and traditional compute cores. At Hot Chips 2026, Samsung discusses their continued pursuit of in-memory compute with their PIM (Processing-in-Memory) push. They’re implementing MAC units within LPDDR5X chips, while preserving the chip’s ability to interface with a standard memory controller.

DRAM chips are internally divided into banks, each with their own read and write logic. During a normal DRAM access, the memory controller selects a bank, activates a row within it, and then accesses data via column access strobe (CAS) commands. Bandwidth is limited by the chip’s external DRAM interface. Even if the memory controller could activate all of the banks simultaneously, it wouldn’t be able to get its hands the full bandwidth available across all the banks.