Para Light Launches ThermaFlat™ SiC MOSFETs to Break the Thermal Barrier in High-Power Applications
Para Light Electronics has launched its new ThermaFlat SiC MOSFETs, designed to improve thermal stability in high-power applications. The technology addresses resistance drift issues, which are critical for efficiency in sectors like AI, electric vehicles, and renewable energy.
Why it matters
Advancements in semiconductor thermal management are essential for supporting the power demands of next-generation computing and electrification technologies.
Breakthrough ultra-low R DS ( on ) drift technology delivers higher efficiency, greater power density, and enhanced reliability for next-generation power systems.
NEW DELHI , Aug. 5, 2026 /PRNewswire/ -- Para Light Electronics today announced the official launch of its ThermaFlat™ SiC MOSFET family (ThermaFlat™ I and ThermaFlat™ II), targeting a fundamental thermal challenge in next-generation high-power design. Powered by Para Light's Ultra-Low R DS ( on ) Drift Technology, the new semiconductor portfolio breaks through one of the industry's most persistent technical bottlenecks—delivering exceptional thermal stability, reduced conduction losses, and unmatched reliability across rapidly expanding electrification markets.
Solving Power Electronics' Most Persistent Bottleneck
The global transition toward electrification—driven by artificial intelligence (AI), high-performance computing (HPC), renewable energy, electric vehicles (EVs), and energy storage—is forcing power systems to deliver higher output within smaller, cooler, and more efficient footprints.
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