Nanoscale gaps reveal new design rule for atom-thin chips and memory
Researchers at the National University of Singapore have discovered that nanoscale gaps between electrodes are a critical factor in the performance of atom-thin electronic devices. This finding challenges existing assumptions that material choice is the sole determinant for electrical leakage in next-generation chips.
Why it matters
This discovery provides a new design rule that could lead to more reliable, energy-efficient, and ultra-small electronic components.
edited by Gaby Clark , reviewed by Andrew Zinin
This article has been reviewed according to Science X's editorial process and policies . Editors have highlighted the following attributes while ensuring the content's credibility:
Add as preferred source Nanoscale characterization on hBN/Gr and hBN/metal (sputtered Ru and evaporated Au). Credit: Nature Materials (2026). DOI: 10.1038/s41563-026-02650-2 Researchers at the College of Design and Engineering at the National University of Singapore have identified a key design principle for building reliable electronics from materials only one atomic layer thick, giving engineers a clearer way to control unwanted electrical leakage in future ultra-small devices.
The finding challenges the assumption that material choice alone determines device performance.
Get smarter about the news
Sign up free for a feed built around what you actually care about, Dive Deeper research on any story, and the full text of every article.
Create free accountAlready have an account? Sign in