KAIST Tames Potent Semiconductor Gas Using Disorder
KAIST researchers, in collaboration with Samsung Electronics, have developed a new catalyst that efficiently removes tetrafluoromethane (CF₄), a potent greenhouse gas used in semiconductor manufacturing. By using a 'disorder' technique to mix metal atoms, the team has created a more stable and longer-lasting catalyst for decomposing the gas.
Why it matters
This innovation addresses a significant environmental challenge in the semiconductor industry, potentially reducing the long-term climate impact of high-tech manufacturing.
< Researchers. KAIST research team (from left) Dr. Seunghyuck Chi, Postdoctoral Researcher, Department of Chemical and Biomolecular Engineering; Professor Minkee Choi, Department of Chemical and Biomolecular Engineering >
Among the gases used in semiconductor manufacturing, tetrafluoromethane (CF₄) is a greenhouse gas over 6,000 times more potent than carbon dioxide. A KAIST research team has developed a technology that removes this gas with high efficiency while extending the usable lifetime of the catalyst that helps break it down by harnessing the 'power of disorder,' in which mixing multiple metal atoms together actually stabilizes the catalyst's structure.
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