'Extreme' transistor can withstand heat of 1000-plus F - priming it for use in Venus-bound probes
Researchers in Japan have developed a silicon carbide junction field-effect transistor capable of operating at temperatures up to 1,112 degrees Fahrenheit. This robust component is intended for use in extreme environments, such as surface probes exploring Venus.
Why it matters
This technological advancement enables deeper space exploration by allowing electronic components to function in environments previously considered too harsh for standard hardware.
The silicon carbide transistor is designed to avoid low controllability and current leakage, which typically become problems at high temperatures.
By Fiona Jackson Edited by Keumars Afifi-Sabet , James Price Published 6 September 2026 In News When you purchase through links on our site, we may earn an affiliate commission. Here's how it works .
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The transistor was able to operate normally at temperatures ranging from room temperature to 1112 F (600 C).
Scientists in Japan have built a new transistor that can withstand temperatures of 1,110 degrees Fahrenheit (600 degrees Celsius). Components this robust could one day be used in surface probes on Venus - where the thick carbon dioxide atmosphere can reach temperatures of 860 F (460 C).
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